Patent and Trademark Attorney Los Angeles California - CalPatentlaw Intellectual Property

Robert E. Kasody, E.S.Q.,

Phone 310-348-8195
Fax 866-449-3390

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6601 Center Drive West, Suite 500, Los Angeles, CA 90045

Author for:

1.) "K-Band Double-Balanced Mixer Using GAAS HBT THZ Schottky Diodes", IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, May 23-25,1994.

2.) "Low Noise, High Gain Q-Band Monolithic Hemt Receiver", IEEE Microwave
and Millimeter-Wave Monolithic Circuits Symposium, May 23-25, 1994.

3.) "MMIC Chip Set For V-Band Crosslink Communication Systems", IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, May 1994.

4.) "Monolithic V-Band Frequency Converter Chip Set Development Using 0.2 & MIM ALGAAS/INGAAS/GAAS Pseudomorphic Hemt Technology", IEEE Transactions on Microwave Theory and Techniques, January 1994.

5.) "60 GHZ High-Efficiency Hemt MMIC Chip Set Development For High-Power
Solid State Power Amplifier", 1997 IEEE MTT-S International Microwave Symposium Digest Proceedings, June 8-13, 1997.

6.) "KA-Band Hemt MMIC 1 Watt Power Amplifier", IEEE 1994 Microwave and
Millimeter-Wave Monolithic Circuits Symposium, June 14-15, 1993.

7.) "Highly Compact, Wideband GAAS Hemt X-KU Band Image-Reject Receiver MMIC", 1993 IEEE MTT-S International Microwave Symposium Digest, Part 1 of 3, June 14-18, 1993.

8.) "High Efficiency 0.15UM gate, 2-Mil Thick INGAAS/ALGAAS/GAAS V-Band Power Hemt MMIC", 1996 GaAs IC Symposium Proceedings, November 3-6, 1996.

9.) "5-10 GHZ Octave-Band ALGAAS/GAAS HBT-Schottky Diode Down-Converter MMIC", IEEE Journal of Solid-State Circuits Proceedings, October 1996.

10.) "Phased-Array Receiver Development Using High-Performance Hemt MMICS", Proceedings of SPIE - The International Society for Optical Engineering Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, April 2-4, 1991.

11.) "Q-Band High-Efficiency Monolithic Hemt Power Prematch Structures", IEEE Electronics Letters, March 16, 1995.

12.) "Double-Double Balanced HBT Schottky Diode Broadband Mixer at X-Band",Technical Digest - GaAs IC (Gallium Arsenide Integrated Circuit) Symposium, October 16-19, 1994.

13.) "High Efficiency V-Band Monolithic Hemt Power Amplifiers", IEEE Microwave and Guided Wave Letters, September 1994.

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